smd type transistors 2SD1614 features world standard miniature package. high dc current gain. low v ce(sat) . absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6v collector current (dc) i c 2a collector current (pulse) * i c 3a total power dissipation p t 2.0 w junction temperature t j 150 storage temperature t stg -55 to +150 * pulse test pw 10ms, duty cycle 50%. h fe classification marking xm xl xk hfe 135 270 200 400 300 600 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =30v,i e = 0 a 100 na emitter cutoff current i ebo v eb =6.0v,i c = 0 a 100 na dc current gain * h fe v ce =2.0v,i c = 100 ma 135 350 600 collector saturation voltage * v ce(sat) i c =2a,i b =50ma 0.3 0.5 v base saturation voltage * v be(sat) i c =2a,i b = 50 ma 0.95 1.2 v base-emitter voltage * v be v ce =6.0v,i c = 100 ma 650 680 750 mv gain bandwidth product f t v ce =10v,i e = -50 ma 200 mhz output capacitance c ob v cb =10v,i e = 0, f = 1.0 mhz 28 pf * pulsed: pw 350 s, duty cycle 2% sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type product specification smd type transistors smd type product specification 4008-318-123
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